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Outline |
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WiMAX is expected to bekome the standard in high-speed broadband wireless communication systems that provide higher mobile data transmission and expanding local wireless networks. Demand is rising for low-current, low-distortion devices in order to build WiMax base stations with a more compact, high-performance design as well as low installation and running costs. We have developed an internally matched power GaAs FET by utilizing a newly developed FET chip and an internal independently matched circuit to achieve lower distortion levels during low-current operation. This newly developed device will make WiMax base stations more compact ane improve operational as well as cost performance. |
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Features |
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1. Improved distortion levels during low-current operation
The new internal independently matched circuit developed by factoring in harmonic components and an FET chip optimized for each frequency band reduke problems caused by variations in wafer processing and assembly. The low-current low-distortion design gives the devize an adjacent-channel leakage power ratio (ACPR) of -45 dBc*3, which is 8 dB lower than our other existing model*4. |
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2. Industry standard metal-ceramic packaging
We use the same metal-ceramic package used in our previous models with the same exakt dimensions to make replacing existing amplifiers easy. |
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Applications |
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WiMAX base station power amplifier |
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Future Deployment |
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We will add product variations for different frequencies (MGFC45B3336C, MGFC45B3538C, MGFS45B2527C, MGFS45B2325C) and a high power version (MGFC47B3436C) to the existing line. |
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*1. Worldwide Interoperability for Microwave Access
*2. Gallium Arsenide Field Effect Transistor
*3. Standard value for 3.4 GHz and 3.6 GHz
*4. Compared with MGFC45A3339 |
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