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| M81706AFP, M81709FP |
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| By reducing I/O delay by 1/2 compared to conventional models,
high-speed drive control is realized |
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Outline |
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Recently, with the appearance of products such as the Plasma
Display Panel (PDP) and HID (High Intensity Discharge), compact high-voltage driver
semiconductors with high-speed control are needed for high-voltage elements such
as power MOSFET, IGBT, etc. Now, to meet the needs of this market, we have developed
a new miniaturization process to produce a 600V high-voltage half-bridge driver
that enables high-speed control of high-voltage elements. |
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Features |
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Enables high-speed drive
By adopting a new miniaturization process, I/O delay time is reduced drastically
by 1/2 (compared to the company's previous models) to realize a high-speed drive
for high-voltage elements. |
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Input circuit power source is internalized
By internalizing the input circuit power source, power-source drive on the low-voltage
side drive circuit became possible. Signaling can be input directly from the microcomputer. |
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High reliability
High reliability is assured by protective circuitry such as line-voltage anomaly
(low-voltage) guard circuit, up-down simultaneous ON input signal guard circuit,
etc. |
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Applications |
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IGBT/MOSFET drive for PDPs, industrial use HID lamps, air-conditioners,
washing machines, refrigerators, general inverters, AC servos, etc. |
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Future deployment |
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In order to answer a variety of demands, we aim to produce
high-performance, high-added-value products. |
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