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Low-noise GaAs HEMT for Satellite Digital Radio
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| MGF4921AM |
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| Full-mold package contributes to higher performance and lower cost |
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Overview |
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The satellite digital audio radio service (SDARS*1) that has become popular in North America since 2001 does not require tuning for each individual region as analog radio broadcasting does. This has led to continued deployment in automobiles as a data transmission service for traffic information and entertainment purposes. It is expected that these data transmission services will be launched in regions other than North America, and that the market will expand worldwide.

Demand for high election mobility transistors (HEMTs), which are used in devices such as the low-noise amplifier used in the SDARS' reception system, has been increasing. To improve reception sensitivity, there is a need for a high-performance low-noise HEMT.

Our HEMT product has industry-leading low-noise characteristics over a wide band ranging from the S band to the C band.

*1 Satellite Digital Audio Radio Service: service in the S band (2.31-2.36GHz (gigahertz) frequency band) (North America) |
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Features |
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Industry-leading low-noise characteristics
If a low-noise GaAs HEMT from 12 to 20GHz is used in a low-frequency band, it is difficult to achieve both stability and low-noise characteristics. By optimizing the gate width and implementing other measures, we have improved stability in the low-frequency band to achieve a noise figure (NF) (a scale used for measuring the noise generated by the entire device) of 0.35dB*2. This noise figure, which is an improvement of 0.1dB*3 compared to prior existing products, provide our products with industry-leading low-noise characteristics. As it is used in the amplifier's initial stage, in which a high level of low-noise capability is needed, the product improves the reception sensitivity of the reception converter for satellite digital radio. This contributes to an expanded reception area and lower reception converter cost.

*2 Standard value at a frequency of 2.4GHz.
*3 A comparison in which our company's low-noise GaAs HEMT "MGF4953A" for 12GHz was evaluated using a matching substrate stabilized at 2.4GHz.
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Development efficiency improved utilizing industry-standard 4-pin full-mold package
We utilized an industry-standard 4-pin full-mold package. This allows the standard foot pattern*4 to be used, which helps our customers improve their development efficiency.

*4 The pattern of the electrode section that is soldered to the wiring substrate.
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Main Specifications |
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Recommended conditions: VDS = 2V, ID = 15mA (condition for reference value: ID = 10mA) |
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Noise figure (NF min.): 0.35dB (f = 4GHz, standard value); reference value 0.35dB (f = 2.4GHz, standard value) |
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Noise minimum power gain (Gs): 13.0dB (f = 4GHz, standard value); reference value 18dB (f = 2.4GHz, standard value) |
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Applications |
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2.4GHz-band satellite digital radio |
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4GHz-band DBS converter's low-noise amplifier |
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Future Development |
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We will continue to enhance our product line-up by developing transistors for the subsequent stage, which requires high-output/low-distortion characteristics. |
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Block diagram (satellite digital radio broadcasting receiver) |
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Performance map |
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