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2010 International Microwave Symposium (Booth #1315)
Mitsubishi Electric will exhibit at this excellent venue providing a great opportunity to unveil the latest in high performance Microwave and RF products.
Exhibition Dates : 25-27 May 2010
Venue : Anaheim Convention Center, Anaheim, CA, USA

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GaAs Devices

Low-noise GaAs FET
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Low-noise GaAs HEMT
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High-power GaAs FET
(small signal gain stage)
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L/S Band Internally Matched
power GaAs FET
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C Band Internally Matched
power GaAs FET
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X/Ku Band Internally Matched
power GaAs FET
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GaAs Hybrid IC for Mobile Phone
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GaAs Amplifier for Wireless Access
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SiRF Devices

VHF 50-300MHz/ Low-output Power
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VHF 50-300MHz/ High-output Power
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UHF 300-500MHz/ Low-output Power
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UHF 300-500MHz/ High-output Power
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800MHz Band
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1.2GHz Band
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HF/VHF/UHF/900MHz
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