Semiconductors High Frequency Devices
MITSUBISHI ELECTRIC SEMICONDUCTOR High Frequency Devices Product Information
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MITSUBISHI GaAs solutions for communication networks in the information era.
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We will be participating in the Microwave Workshops and Exhibition (MWE 2007)!
Our WiMAX and high efficiency W-CDMA (HSDPA compatible) power amplifiers will be on display at MWE 2007, which is being held at Pacifico Yokohama from Wednesday, November 28 to Friday, November 30, 2007.
Information about RoHS for Optical Devices / High Frequency Device was posted. Click here for details. Also data sheets for Si RF Power Module in High Frequency Devices have been updated. Please find them in the Data Sheet Updates page..
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Silicon high-frequency
high-power modules
Silicon high-frequency
high-power MOSFET
GaAs transistors
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GaAs HBT Mobile phone power
amplifier module for W-CDMA applications
(Oct. 2006 data)
3.5 GHz band 30 W internally matched GaAs FET for
WiMAX base station power amplifier
(Oct. 2006 data)
7.2 V operation high-output MOSFETs
for commercial radios
(Oct. 2006 data)
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Silicon high-frequency devices
GaAs transistors