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MITSUBISHI ELECTRIC SEMICONDUCTOR Product News
7.2 V operation high-output MOSFETs for commercial radios
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Main Specifications
Electrical Characteristics (RD12MVP1)
SYMBOL PARAMETER CONDITIONS
LIMITS (Typ.)
UNIT
Pout Output power f=175MHz, VDD=7.2V
Pin=0.5W, Idq=1.0A
12 W
ηD Drain efficiency 60 %
VSWRT Load VSWR tolerance VDD=9.5V, Po=10W (Pin control)
f=175MHz, Idq=1.0A, Zg=50Ω
Load VSWR=20:1 (All phase)
No destroy -
Electrical Characteristics (RD09MUP2)
SYMBOL PARAMETER CONDITIONS
LIMITS (Typ.)
UNIT
Pout Output power f=520MHz, VDD=7.2V
Pin=0.8W, Idq=1.0A
9 W
ηD Drain efficiency 55 %
VSWRT Load VSWR tolerance VDD=9.5V, Po=8W (Pin control)
f=520MHz, Idq=1.0A, Zg=50Ω
Load VSWR=20:1 (All phase)
No destroy -
Electrical Characteristics (RD05MMP1)
SYMBOL PARAMETER CONDITIONS
LIMITS (Typ.)
UNIT
Pout Output power f=941MHz, VDD=7.2V
Pin=0.7W, Idq=1.0A
6 W
ηD Drain efficiency 45 %
VSWRT Load VSWR tolerance VDD=9.5V, Po=5.5W (Pin control)
f=941MHz, Idq=1.0A, Zg=50Ω
Load VSWR=20:1 (All phase)
No destroy -
 
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