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MITSUBISHI ELECTRIC SEMICONDUCTOR Product News
3.5 GHz band 30 W internally matched GaAs FET for WiMAX base station power amplifier
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Main Specifications
Symbol Parameter Test Conditions
Limits
Unit
Minimum
Typical
Maximum
VGS(off) Pinch-off Voltage VD=3V, ID=100mA
-0.5
-
-3.0
V
Po(SAT) Saturation Power Output VDS=12V, ID(RFoff)=0.8A,
f=3.4, 3.6GHz
-
45
-
dBm
GLP Linear Power
VDS=12V, ID(RFoff)=0.8A,
f=3.4, 3.6GHz, Pout=34dBm,
Modulation: 3GPP TEST MODEL1
  64 code Single Signal
Bandwidth=3.84MHz
10
11
-
dB
ID(RF) Drain Current
-
-
1.5
A
ACP Channel Leakage Power Ratio
-41
-45
-
dBc
Rth
(ch-c)
Thermal Resistance Delta Vf method
-
-
1.9
oC/W
 
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